Project 1.  Anisotropic Epitaxial Selective Area Growth

Abstract 

Abstract (ELOG)

Geometry (ELOG)
Eqn1 (ELOG)
Eqn 3 (ELOG) Eqn 4 (ELOG)

Result 1 (ELOG)

The extension of this model studied in [2] accounts for possibly inhomogeneous energy of  the mask surface and for strong
anisotropies of crystal-vapor interfacial energy and kinetic mobility.

Project 2.  Liquid Phase Electro-Epitaxial Selective Area Growth

Abstract

Abstract (EELOG paper)


geometry (EELOG) Result 1 (EELOG)
Result 2 (EELOG) Eqn1 (EELOG)
Eqn2 (EELOG)
Eqn3 (EELOG)


Publications:


[1]. M. Khenner, R.J. Braun,
       Numerical Simulation of Liquid Phase Electro-Epitaxial Selective Area Growth     
      Journal of  Crystal Growth 279 (2005) 213-228; due to copyright restrictions, fulltext is available on request only       
 

[2]. M. Khenner,
      
Motion of Contact Line of a Crystal Over the Edge of Solid Mask in Epitaxial lateral Overgrowth      
       
Computational Materials Science 32 (2005) 203-216due to copyright restrictions, fulltext is available on request only     

[3]. M. Khenner,
      
Computation of the Material Indicator Function Near the Contact Line (in Tryggvason's method)     
      Journal of Computational Physics 200(1) (2004) 1-7
due to copyright restrictions, fulltext is available on request only     

[4]. M. Khenner,
    
Enhancement of Epitaxial Lateral Overgrowth by Vapor-Phase Diffusion   
     International Journal of Engineering Science 42 (2004) 1439-1457; 
due to copyright restrictions, fulltext is available on request only  

[5]. M. Khenner, R.J. Braun, M.G. Mauk,
     A Model for Anisotropic Epitaxial Lateral Overgrowth     
     Journal of  Crystal Growth 241 (2002) 330-346; due to copyright restrictions, fulltext is available on request only     

[6]. M. Khenner, R.J. Braun, M.G. Mauk,
      A Model for Isotropic Crystal Growth from Vapor on a Patterned Substrate     
     Journal of  Crystal Growth 235 (2002) 425-438; due to copyright restrictions, fulltext is available on request only